FLOSFIA Inc. Develops Next-Generation Power Semiconductors with JST Support, Aiming for Reduced Power Loss and Lower Costs

JST (President: Kazuhito Hashimoto) has decided to provide development support to FLOSFIA Inc. (Headquarters: Kyoto, Japan; President and CEO: Takashi Shinohe) under the 2025 call for proposals for the Program for Promoting the Optimal Utilization of Research Results (A-STEP) Implementation Support (Repayable). With A-STEP's support, FLOSFIA will develop next-generation power semiconductors with world-class low loss and high breakdown voltage, leveraging the material properties of alpha-gallium oxide. The company aims to disseminate this implementation technology, which achieves both high efficiency in power conversion and cost reduction.

Image of business development for alpha-gallium oxide (α-Ga₂O₃) power semiconductors (Source: FLOSFIA Inc.)

▶ Increasing Power Demand and the Challenge of "Power Loss"

In recent years, societal power consumption has rapidly expanded due to the increase in AI data centers, electric vehicles (EVs), and the sophistication of industrial equipment. After power is generated, it is not used directly but needs to be converted in voltage and current according to the application. The loss of significant energy during this power conversion process has become a major societal challenge. In Japan, it is estimated that power loss during conversion accounts for over 10% of total power generation, making the reduction of power loss key to improving energy efficiency.

▶ Power Semiconductors Support Society

"Power semiconductors" play a central role in power conversion. Power semiconductors are used in all aspects of our social infrastructure, including power supplies for AI data centers, electric vehicles, rapid chargers, industrial equipment, and power transmission/distribution facilities. While current mainstream silicon (Si) power semiconductors offer high reliability, they suffer from significant power loss. In contrast, new high-performance materials like silicon carbide (SiC) and gallium nitride (GaN) offer superior performance but have been hindered by high manufacturing costs, impeding their widespread adoption.

▶ FLOSFIA's "New Material" Development

FLOSFIA is developing a new semiconductor material called "alpha-gallium oxide (α-Ga₂O₃)." This material is characterized by its ability to withstand high voltages and significantly reduce power loss, theoretically promising performance superior to conventional materials. Furthermore, FLOSFIA's major strength lies in its ability to mass-produce these high-performance materials at relatively low cost, using its proprietary "MistDry® method" developed through joint research with Kyoto University. This technology involves supplying a liquid containing alpha-gallium oxide crystal material in a mist form to a substrate, allowing high-quality crystals to grow under simple conditions of low temperature and atmospheric pressure.

Principle of the MistDry® method (Source: FLOSFIA Inc.)

▶ Goals of This Development

In this JST support project, FLOSFIA has set the following goals:

Further evolving the already achieved 600V-class devices, FLOSFIA will develop 1200V-class high-breakdown voltage power MOSFETs (transistors that control current flow by voltage applied to the gate electrode). Concurrently, the company will conduct performance verification required for AI data centers and electric vehicles, and provide prototypes to client companies. Additionally, FLOSFIA will conduct long-term tests based on international semiconductor reliability standards to ensure practical-level reliability.

▶ How Society Will Change with Practical Application

Practical application of this technology is expected to reduce power loss during power conversion and decrease electricity consumption, leading to reductions in energy costs and CO₂ emissions.

FLOSFIA envisions deployment in a wide range of fields, including AI data centers, inverters and chargers for electric vehicles, industrial power supplies, and power infrastructure equipment. By simultaneously achieving "low loss, high breakdown voltage, and low cost," FLOSFIA will offer new options to the power semiconductor market and contribute to the realization of an energy-efficient society.

▶ Development Overview

1. Development Challenge Name

Development of 1200V10A-class alpha-gallium oxide power MOSFET

2. Researchers who created the technological seed at universities, etc.

Shizuo Fujita (Professor Emeritus, Kyoto University)

3. Developing Company

Company Name FLOSFIA Inc.

Month of Establishment March 2011

Headquarters Location Kyoto, Kyoto Prefecture

President and CEO Takashi Shinohe

Business Description Development and implementation of alpha-gallium oxide (α-Ga₂O₃) power semiconductors

▶ Overview of A-STEP Implementation Support (Repayable)

1. System Overview

This program supports practical development for creating innovative products and services by lending development funds to startups aiming for the societal implementation of research results (technological seeds) from universities and other institutions.

2. Eligible Companies: Startups, etc.

3. Support Scale

Development Period: Up to 3 years

Development Costs: Up to 500 million yen (advance payment of estimated amount quarterly)

4. Repayment Conditions:

Repayment Amount: Expended by JST