Dai Nippon Printing Co., Ltd. (DNP) announced that its "10nm line width nanoimprint lithography (NIL) template" for advanced semiconductor manufacturing, unveiled last December, was highly acclaimed and received the Grand Prix in the Semiconductor Electronic Materials division at the "Semiconductor of the Year 2026," hosted by Sangyo Times, on May 21, 2026. The award ceremony was held on June 10.
Now in its 32nd year, this award recognizes outstanding technologies, products, and companies that contribute to the advancement of the semiconductor industry. The award was given in recognition of its high-precision pattern formation technology that meets the needs for semiconductor miniaturization, and its potential for application in next-generation semiconductor manufacturing.
Scene from the "Semiconductor of the Year 2026" award ceremony and presentation.
About "Semiconductor of the Year 2026":
This award recognizes excellent semiconductor-related products and technologies announced between April 2025 and March 2026. Candidates include new products as well as improvement technologies that have enhanced the performance or functionality of existing products. Nominees are selected from products and technologies featured in the "Electronic Device Industry Newspaper," recommendations from the newspaper's reporters, and applications from companies.
The award consists of three divisions: "Semiconductor Devices," "Semiconductor Manufacturing Equipment," and "Semiconductor Electronic Materials." Winners are determined through strict voting by the newspaper's reporters from the perspectives of originality of development, mass-producibility, social impact, and future potential.
Website → https://www.sangyo-times.jp/seminarDtl.aspx?ID=649
About the 10nm Line Width NIL Template Developed by DNP:
DNP achieved the miniaturization of the NIL template by utilizing Self-Aligned Double Patterning (SADP), which doubles the pattern density by combining film deposition and etching processes with patterns formed on a mask substrate by a drawing apparatus. By applying its accumulated expertise in photomask manufacturing technology and know-how, along with wafer process manufacturing techniques, it supports logic semiconductors equivalent to the 1.4 nanometer generation.
This technology contributes to the efficiency of the exposure process and reduction of power consumption in advanced semiconductor manufacturing. Compared to conventional exposure processes such as ArF immersion lithography and EUV lithography, this NIL-based technology can reduce power consumption to approximately one-tenth. *2
Future Developments:
DNP aims to start mass production by advancing the evaluation of NIL templates, anticipating the miniaturization needs of semiconductors through deeper dialogue with customers such as semiconductor manufacturers.
Going forward, DNP will continue to strengthen the development of semiconductor-related products and technologies, including NIL templates, and contribute to the advancement of the semiconductor field that supports the next-generation information society.
*1 Nanoimprint lithography (NIL) is a technology that forms circuits by transferring fine patterns formed on a template to a resin. This template is used as a mold for transferring semiconductor circuit patterns. → https://www.dnp.co.jp/news/detail/20177717_1587.html
*2 Energy-saving processing technology for ultra-fine semiconductors using NIL → https://www.dnp.co.jp/news/detail/10162455_1587.html
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*The information provided herein is current as of the date of announcement and is subject to change without notice.
FACT BOX
- Source: PR TIMES
- Category: New Product