Mitsubishi Electric will start shipping samples of two new SiC-MOSFET chip models in late June 2026, designed for motor inverters and eAxles in electric vehicles (EVs) and plug-in hybrids (PHEVs), known as xEVs. The newly developed 5th-generation SiC-MOSFET chips feature a proprietary trench structure (FSC structure) combined with oblique ion implantation. This design increases cell density to achieve industry-leading low on-resistance, which is reduced by approximately 25% compared to conventional trench-type products. This allows for smaller, higher-performance inverters, extending xEV range and efficiency. Mitsubishi Electric also applied its proprietary manufacturing processes (leveraging over 20 years of research and production of SiC devices) to suppress degradation from body diode conduction and ensure stable quality over long-term use. The products will be shown at PCIM Expo & Conference 2026 in Nuremberg, Germany (June 9-11, 2026), and at exhibitions in Japan and China.
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- Source: PR TIMES
- Category: semiconductors